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| TSM9966DCX6 20V Dual N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 1 2. Drain 3. Gate 2 4. Source 2 5. Drain 6. Source 1 VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 5A = 30m RDS (on), Vgs @ 2.5V, Ids @ 4A = 40m Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Surface mount Fast switching Block Diagram Ordering Information Part No. TSM9966DCX6 Packing Tape & Reel Package SOT-26 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Maximum Power Dissipation Ta = 25 C Ta > 25 oC Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG o Symbol VDS VGS ID IDM PD Limit 20V 12 5 20 1.25 16 +150 - 55 to +150 Unit V V A A W mW/ oC o o C C Thermal Performance Parameter Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=5sec. Symbol Rja Limit 100 Unit o C/W TSM9966D 1-4 2005/12 rev. A Electrical Characteristics (per channel) Ta = 25 oC unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance Conditions VGS = 0V, ID = 250uA VGS = 4.5V, ID = 5A VGS = 2.5V, ID = 4A VDS = VGS, ID = 250uA VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VDS = 10V, ID = 5A VDS = 10V, ID = 5A, VGS = 4.5V VDD = 10V, RL = 10, ID = 1A, VGEN = 4.5V, RG = 6 VDS = 10V, VGS = 0V, f = 1.0MHz Symbol BVDSS RDS(ON) RDS(ON) VGS(TH) IDSS IGSS gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS Min 20 --0.6 --7 ------------- Typ -25 30 ---13 4.8 0.9 1.4 8.1 9.9 21.8 5.3 562 106 75 -0.75 Max -30 Unit V m 40 -1.0 100 ----15 ------1.7 1.2 A V pF nS nC V uA nA S Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = 1.7A, VGS = 0V VSD Note : pulse test: pulse width <=300uS, duty cycle <=2% TSM9966D 2-4 2005/12 rev. A Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) TSM9966D 3-4 2005/12 rev. A SOT-26 Mechanical Drawing DIM A B C D E F H L SOT-26 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.70 3.00 0.106 0.118 0.25 0.50 0.010 0.020 1.90(typ) 0.075(typ) 0.95(typ) 0.037(typ) 1.50 1.70 0.059 0.067 1.05 1.35 0.041 0.053 2.60 3.00 0.102 0.118 0.60(typ) 0.024(typ) TSM9966D 4-4 2005/12 rev. A |
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